Research Letters

The structural characterisation of HWCVD-deposited nanocrystalline silicon films

Bibhu P. Swain
South African Journal of Science | Vol 105, No 1/2 | a41 | DOI: | © 2010 Bibhu P. Swain | This work is licensed under CC Attribution 4.0
Submitted: 19 January 2010 | Published: 19 January 2010

About the author(s)

Bibhu P. Swain, Department of Physics, University of Cape Town, Private Bag, Rondebosch 7701, South Africa. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Mumbai, India., South Africa

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Nanocrystalline silicon (nc-Si) films were deposited by hot-wire chemical vapour deposition (HWCVD) in the presence of varying H2 concentrations and their structural and interfacial character investigated by X-ray diffraction, small-angle X-ray scattering (SAXS) and Raman spectroscopy. The crystalline fraction was around 30–50% and the nc-Si crystallite size was in the range 20–35 nm. The SAXS results were analysed by Guinier plot, scaling factor, and correlation distance. The nc-Si grains displayed a mass fractal appearance, and the interfacial inhomogeneity distance was ~2 nm.


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Crossref Citations

1. Hydrogen Dilution-Induced Chemical State Modification in Silicon Nanowires
Bhabani S. Swain, Bibhu P. Swain, Nong M. Hwang
The Journal of Physical Chemistry C  vol: 114  issue: 36  first page: 15274  year: 2010  
doi: 10.1021/jp102241a