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Solid-state compound phase formation of TiSi2 thin films under stress
South African Journal of Science | Vol 105, No 11/12 | a144 |
DOI: https://doi.org/10.4102/sajs.v105i11/12.144
| © 2010 C. Theron, N. Mokoena, O. M. Ndwandwe
| This work is licensed under CC Attribution 4.0
Submitted: 02 February 2010 | Published: 02 February 2010
Submitted: 02 February 2010 | Published: 02 February 2010
About the author(s)
C. Theron, Department of Physics, University of Pretoria, Pretoria 0002, South Africa., South AfricaN. Mokoena, Department of Physics and Engineering, University of Zululand, Private Bag X1001, KwaDlangezwa 3886, South Africa. Reactor Fuel Engineering Group, Koeberg Nuclear Power Station, Private Bag X10, Kernkrag 7440, South Africa., South Africa
O. M. Ndwandwe, Department of Physics and Engineering, University of Zululand, Private Bag X1001, KwaDlangezwa 3886, South Africa., South Africa
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Abstract
Different stress situations were created on an Si(100) wafer by depositing either Si3N4 or SiO2 thin films on the back side. Si3N4 has a different thermal expansion coefficient from that of SiO2. A thin Ti film was then deposited on the front side of the Si wafer. The structures were then annealed at various high temperatures for different periods of time. Real-time Rutherford backscattering spectrometry, as well as sample curvature measurements, were used to characterise the samples. Different reaction rates were found between Si3N4-deposited samples and SiO2-deposited samples.
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